Niigata, Japan

Naruhiro Hoshino

This inventor holds 21 USPTO granted patents and 8 published patent applications and 7 EPO patents, primarily in Polycrystalline Silicon Manufacturing. Top assignees: Shin-Etsu Chemical Co., Ltd., Shin-Etsu Chemical C O., Ltd., Shin-Etsu Chemical Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naruhiro Hoshino. Retrieved from https://idiyas.com/inventor/naruhiro-hoshino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 90.5

 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Polycrystalline Silicon
Manufacturing Method
Production Reactor
Cleaning System
Silicon Rod
Silicon Ingot
Contamination Prevention
Quality Evaluation
Silicon Core Wire
Manufacturing Apparatus
Single Crystal Silicon
Polysilicon Rod
21 patents (USPTO):Explore Patents

Title: The Innovative Mind of Naruhiro Hoshino

Introduction

Naruhiro Hoshino is a prominent inventor based in Niigata, Japan, known for his significant contributions to the field of polysilicon production. With an impressive portfolio of 18 patents, he has pioneered various advancements that enhance cleaning systems and manufacturing methods in the semiconductor industry.

Latest Patents

Among Hoshino's latest innovations is a sophisticated cleaning system and cleaning method designed to improve the polysilicon production process. This system features a first pipe connected to a reactor that produces polysilicon using chlorosilane as a raw material. It includes a heat exchanger linked to the first pipe, a second pipe positioned between the heat exchanger and the first pipe, and a driving unit located at either the first or second pipe. The cleaning liquid circulates through the system effectively, thanks to the driving unit.

Another significant patent pertains to the method of manufacturing polycrystalline silicon rods, targeted at providing raw materials for monocrystalline silicon through a Float Zone (FZ) process. This method innovatively includes a post-deposition energization step that performs energization conditions under shallower skin depth than when the deposition step concludes. This is achieved by passing current at higher frequencies than those used at the end of the deposition process.

Career Highlights

Hoshino's career includes working with notable companies, such as Shin-Etsu Chemical Co., Ltd., where he refined his expertise in semiconductor manufacturing. His work has played a crucial role in advancing processes that are vital to the production of high-quality silicon materials.

Collaborations

Throughout his career, Hoshino has collaborated with esteemed colleagues, including Tetsuro Okada and Masahiko Ishida. These collaborations have allowed him to exchange ideas and innovations that have further propelled advancements in semiconductor technology.

Conclusion

Naruhiro Hoshino's innovative contributions to polysilicon production, as evidenced by his 18 patents, reflect his commitment to enhancing this critical industry. His work continues to impact the world of semiconductor manufacturing, demonstrating the profound effect of dedicated inventors on technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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