The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Jul. 25, 2016
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Yasushi Kurosawa, Niigata, JP;

Shigeyoshi Netsu, Niigata, JP;

Naruhiro Hoshino, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C01B 33/035 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); C23C 16/24 (2013.01);
Abstract

A reactoraccording to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater to initial heating of silicon core wires. A carbon heateris loaded in a deposition reaction spacein the reactoronly when necessary for initial heating of silicon core wires. After initial heating of the silicon core wiresis finished, the carbon heateris unloaded from the deposition reaction space to the heater storage section. As a result, the carbon heateris not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced.


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