Chiba, Japan

Naoto Inoue

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 161(Granted Patents)


Location History:

  • Tokyo, JP (1993 - 2001)
  • Chiba, JP (2000 - 2010)

Company Filing History:


Years Active: 1993-2010

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11 patents (USPTO):Explore Patents

Title: Naoto Inoue: Innovator in Semiconductor Technology

Introduction

Naoto Inoue is a prominent inventor based in Chiba, Japan, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, Inoue has made remarkable advancements in the field, particularly in the design and functionality of semiconductor devices.

Latest Patents

Inoue's latest patents include a semiconductor device featuring a trench isolation structure and a high power supply voltage circuit section. This innovative design incorporates a carrier capture region that prevents latch-up near the end portion of the well region. Additionally, he has developed a semiconductor device with dual gate oxides, which involves a method for creating active regions with different operational voltages. This method enhances the performance and efficiency of semiconductor devices.

Career Highlights

Throughout his career, Naoto Inoue has worked with notable companies such as Seiko Instruments Inc. and Silterra Malaysia Sdn. Bhd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Inoue has collaborated with talented individuals in the field, including Sang Yeon Kim and Min Paek. These partnerships have fostered innovation and have led to the development of advanced semiconductor solutions.

Conclusion

Naoto Inoue's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents and collaborations highlight his significant impact on the industry, making him a noteworthy figure in the world of inventions.

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