Naoto Inoue

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Seiko Instruments Inc, Silterra Malaysia Sdn. Bhd., Silterra Malaysia Sdh. Bhd. Active years: 1993-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoto Inoue. Retrieved from https://idiyas.com/inventor/naoto-inoue-cs3n29z9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 11 (Patent Applications = 1)

% Patents Active = 90.9

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 161(Granted Patents)

Location History:

Tokyo, JP (1993 - 2001)
Chiba, JP (2000 - 2010)

Company Filing History:

7 out of 2,903

Seiko Instruments Inc

patents

4 out of 17

Silterra Malaysia Sdn. Bhd.

patents

1 out of 1

Silterra Malaysia Sdh. Bhd

patent

where one patent can have more than one assignee

Years Active: 1993-2010

Loading Chart...

11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7667280 - Semiconductor device (2010-02-23),

2. 7259071 - Semiconductor device with dual gate oxides (2007-08-21),

3. 7241665 - Shallow trench isolation (2007-07-10),

4. 7166901 - Semiconductor device (2007-01-23),

5. 7091104 - Shallow trench isolation (2006-08-15),

6. 6818514 - Semiconductor device with dual gate oxides (2004-11-16),

7. 6492692 - Semiconductor integrated circuit and manufacturing method therefore (2002-12-10),

8. 6351362 - Protection circuit for an LCD controller IC (2002-02-26),

9. 6329274 - Method of producing semiconductor device (2001-12-11),

10. 6022792 - Semiconductor dicing and assembling method (2000-02-08),

11. 5250827 - Semiconductor integrated circuit having a DRAM cell unit and a (1993-10-05),

Title: Naoto Inoue: Innovator in Semiconductor Technology

Introduction

Naoto Inoue is a prominent inventor based in Chiba, Japan, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, Inoue has made remarkable advancements in the field, particularly in the design and functionality of semiconductor devices.

Latest Patents

Inoue's latest patents include a semiconductor device featuring a trench isolation structure and a high power supply voltage circuit section. This innovative design incorporates a carrier capture region that prevents latch-up near the end portion of the well region. Additionally, he has developed a semiconductor device with dual gate oxides, which involves a method for creating active regions with different operational voltages. This method enhances the performance and efficiency of semiconductor devices.

Career Highlights

Throughout his career, Naoto Inoue has worked with notable companies such as Seiko Instruments Inc. and Silterra Malaysia Sdn. Bhd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Inoue has collaborated with talented individuals in the field, including Sang Yeon Kim and Min Paek. These partnerships have fostered innovation and have led to the development of advanced semiconductor solutions.

Conclusion

Naoto Inoue's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents and collaborations highlight his significant impact on the industry, making him a noteworthy figure in the world of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: