The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Feb. 13, 2008
Hiroaki Takasu, Chiba, JP;
Naoto Inoue, Chiba, JP;
Sukehiro Yamamoto, Chiba, JP;
Seiko Instruments Inc., Chiba, JP;
Abstract
Provided is a semiconductor device having a trench isolation structure and a high power supply voltage circuit section including at least a well region and a MOS transistor formed therein. The high power supply voltage circuit section includes a carrier capture region for preventing latch-up in a vicinity of an end portion of the well region, and a depth of the carrier capture region is larger than a depth of the trench isolation region. The carrier capture region in the high power supply voltage circuit section is formed of a diffusion layer which is the same as that of a source or a drain region of the MOS transistor formed in the high power supply voltage circuit section.