The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Jul. 12, 2006
Inki Kim, Seoul, KR;
Sang Yeon Kim, Chungcheng-bukdo, KR;
Min Paek, Chongju, KR;
Ch'ng Toh Ghee, Penang, MY;
Ramakrishnan Rajagopal, Navi Mumbai, IN;
Chiew Sin Ping, Kuala Lumpur, MY;
Wan Gie Lee, Kyunggi-do, KR;
Choong Shiau Chien, Penang, MY;
Charlie Tay, Kedah, MY;
Chang Gi Lee, Koyang, KR;
Hitomi Watanabe, Tokyo, JP;
Naoto Inoue, Chiba, JP;
Inki Kim, Seoul, KR;
Sang Yeon Kim, Chungcheng-bukdo, KR;
Min Paek, Chongju, KR;
Ch'ng Toh Ghee, Penang, MY;
Ramakrishnan Rajagopal, Navi Mumbai, IN;
Chiew Sin Ping, Kuala Lumpur, MY;
Wan Gie Lee, Kyunggi-do, KR;
Choong Shiau Chien, Penang, MY;
Charlie Tay, Kedah, MY;
Chang Gi Lee, Koyang, KR;
Hitomi Watanabe, Tokyo, JP;
Naoto Inoue, Chiba, JP;
SilTerra Malaysia Sdn. Bhd., Kedah, MY;
Abstract
A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.