The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Sep. 27, 2004
Naoto Inoue, Chiba, JP;
Hitomi Sakurai, Chiba, JP;
Min Paek, Kedah, MY;
Sang Yeon Kim, Kedah, MY;
IN Ki Kim, Kedah, MY;
Naoto Inoue, Chiba, JP;
Hitomi Sakurai, Chiba, JP;
Min Paek, Kedah, MY;
Sang Yeon Kim, Kedah, MY;
In Ki Kim, Kedah, MY;
Seiko Instruments Inc., , JP;
Silterra Malaysia Sdh. Bhd, , MY;
Abstract
A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high voltage region of the semiconductor substrate, and low voltage MOS transistors disposed on the low voltage region of the semiconductor substrate. A first element isolator comprises a first shallow trench disposed on a surface of the low voltage, region of the semiconductor substrate, and a first dielectric embedded in the first shallow trench. A pair of second element isolators comprises two second shallow trenches spaced apart at an interval between a source region or a drain region of the pair of the adjacent high voltage MOS transistors and a source or a drain region of the other of the pair of the adjacent high voltage MOS transistors, and a second dielectric embedded in each of the second shallow trenches. The second shallow trenches are disposed on a surface of the high voltage region of the semiconductor substrate. A channel cut region having a high impurity concentration is disposed on the surface of the substrate between the second shallow trenches.