Nak-jin Son

This inventor holds 16 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nak-jin Son. Retrieved from https://idiyas.com/inventor/nak-jin-son

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 75.0

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 110(Granted Patents)

Location History:

Suwon, KR (2005)
Gyeonggi-do, KR (2006 - 2021)
Suwon-si, KR (2015 - 2023)

Company Filing History:

16 out of 138,671

Samsung Electronics Co., Ltd.

patents

Years Active: 2005-2023

Loading Chart...

Areas of Expertise:

Integrated Circuit

Semiconductor Device

Device Fabrication

Conductive Plug

Transistor

Doping Methods

Selective Epitaxial Growth

Punch-Through Structure

Gate Insulation

Air Spaces

Groove Structures

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11715786 - Integrated circuit device and method of manufacturing the same (2023-08-01),

2. 11094800 - Integrated circuit device and method of manufacturing the same (2021-08-17),

3. 9564340 - Method of manufacturing semiconductor device (2017-02-07),

4. 9548260 - Semiconductor devices including conductive plug (2017-01-17),

5. 9466703 - Method for fabricating semiconductor device (2016-10-11),

6. 9159730 - Methods for fabricating a semiconductor device (2015-10-13),

7. 9123550 - Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same (2015-09-01),

8. 9012321 - Method of manufacturing semiconductor device (2015-04-21),

9. 7833864 - Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate (2010-11-16),

10. 7524733 - Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same (2009-04-28),

11. 7268043 - Semiconductor device and method of manufacturing the same (2007-09-11),

12. 7259069 - Semiconductor device and method of manufacturing the same (2007-08-21),

13. 7223649 - Method of fabricating transistor of DRAM semiconductor device (2007-05-29),

14. 7221023 - Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same (2007-05-22),

15. 7009255 - Semiconductor device having punch-through structure off-setting the edge of the gate electrodes (2006-03-07),

Title: The Innovative Mind of Nak-jin Son

Introduction: Nak-jin Son is a distinguished inventor based in Gyeonggi-do, South Korea, recognized for his significant contributions to the field of integrated circuit devices. With a remarkable portfolio of 16 patents, he is at the forefront of innovation in semiconductor technologies, demonstrating exceptional expertise in material application and device design.

Latest Patents: Among his latest pioneering patents is an integrated circuit device and method of manufacturing the same. This invention features a fin-type active area with an innovative anti-punch-through recess, a unique nanosheet stack, and a carefully designed gate structure. The anti-punch-through semiconductor layer in this integrated circuit demonstrates a novel approach that enhances performance by utilizing materials distinct from those in the source/drain region, signifying a notable advancement in semiconductor manufacturing processes.

Career Highlights: Nak-jin Son currently works at Samsung Electronics Co., Ltd., a leader in technology and innovation. His tenure at such a prestigious company highlights his role in pushing the boundaries of semiconductor research and development. With a solid educational background and a passion for technology, he continues to contribute to the evolution of integrated circuits, making significant impacts in the electronics industry.

Collaborations: Throughout his career, Nak-jin Son has collaborated with talented coworkers such as Ji-Young Kim and Dae-Ik Kim. These collaborations emphasize the importance of teamwork in innovation, showcasing how collective expertise propels technological advancements forward.

Conclusion: Nak-jin Son's work exemplifies the spirit of innovation that drives the semiconductor industry. His dedication to developing cutting-edge technologies and his extensive patent portfolio make him a pivotal figure in the field. As integrated circuits continue to evolve, Nak-jin Son's contributions will undoubtedly play an essential role in shaping the future of electronics.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]