The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 02, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Gi-bong Lee, Suwon-si, KR;
Wook-hyun Kwon, Yongin-si, KR;
Kyung-soo Kim, Hwaseong-si, KR;
Seon-ah Nam, Seoul, KR;
Yeon-ho Park, Seoul, KR;
Nak-jin Son, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.