The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
May. 21, 2014
Dae-ik Kim, Hwaseong-si, KR;
Hyoung-sub Kim, Seongnam-si, KR;
Yoo-sang Hwang, Suwon-si, KR;
Nak-jin Son, Suwon-si, KR;
Ji-young Kim, Yongin-si, KR;
Dae-ik Kim, Hwaseong-si, KR;
Hyoung-sub Kim, Seongnam-si, KR;
Yoo-sang Hwang, Suwon-si, KR;
Nak-jin Son, Suwon-si, KR;
Ji-young Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes forming a sacrificial film as part of a process of forming a semiconductor device. The sacrificial film has a relatively high etch selectivity with respect to other materials of the semiconductor device so as to reduce loss of etching masks and improve the quality of a components (e.g., buried contacts) of the semiconductor device.