The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 05, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dae-Ik Kim, Hwaseong-si, KR;
Ho-In Ryu, Suwon-si, KR;
Nak-Jin Son, Suwon-si, KR;
Yoo-Sang Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a device isolation layer pattern on a substrate to form an active region, the active region including a first contact forming region at a center p of the active region and second and third contact forming regions at edges of the active region, forming an insulating layer and a first conductive layer on the substrate, forming a mask pattern having an isolated shape on the first conductive layer, etching the first conductive layer and the insulating layer to expose the active region of the first contact forming region by using the mask pattern, to form an opening portion between pillar structures, forming a second conductive layer in the opening, and patterning the second conductive layer and the first preliminary conductive layer pattern to form a wiring structure contacting the first contact forming region and having an extended line shape.