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For the Inventor, By the Inventor

Singapore, Singapore

Nace Rossi

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Agere Systems Inc., Globalfoundries Singapore Pte. Ltd.. Active years: 2006-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nace Rossi. Retrieved from https://idiyas.com/inventor/nace-rossi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25

% Patents Active = 68.0

Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 55(Granted Patents)


Company Filing History:

goldMedal24 out of 2,316 
 
Agere Systems Inc.
 patents
silverMedal1 out of 1,058 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2006-2014

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Areas of Expertise:
Bipolar Device
Shallow Trench Isolation
BiCMOS Fabrication
Semiconductor Device
Wafer Warpage Control
Contact Distribution Film
Metal Defects
Collector Resistance
Amorphizing Implant
Graded Doped Silicon Dioxide
25 patents (USPTO):Explore Patents
1. 8872311 - Semiconductor device and a method of manufacture therefor (2014-10-28),
2. 8685861 - Integrated circuit system with contact distribution film (2014-04-01),
3. 8372723 - Bipolar device having buried contacts (2013-02-12),
4. 8106480 - Bipolar device having improved capacitance (2012-01-31),
5. 8084313 - Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor (2011-12-27),
6. 8049282 - Bipolar device having buried contacts (2011-11-01),
7. 8022481 - Robust shallow trench isolation structures and a method for forming shallow trench isolation structures (2011-09-20),
8. 7982286 - Method to improve metal defects in semiconductor device fabrication (2011-07-19),
9. 7923340 - Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow (2011-04-12),
10. 7906407 - Shallow trench isolation structures and a method for forming shallow trench isolation structures (2011-03-15),
11. 7898038 - Method to improve writer leakage in SiGe bipolar device (2011-03-01),
12. 7811944 - Semiconductor device and a method of manufacture therefor (2010-10-12),
13. 7776678 - Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method (2010-08-17),
14. 7675179 - Device and method to eliminate shorting induced by via to metal misalignment (2010-03-09),
15. 7666750 - Bipolar device having improved capacitance (2010-02-23),

Title: The Innovative Journey of Nace Rossi

Introduction: Nace Rossi, a visionary inventor hailing from Singapore, SG, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Nace Rossi's latest patents include a cutting-edge AI-powered healthcare device designed to revolutionize patient care, as well as a sustainable energy solution that aims to tackle environmental challenges.

Career Highlights: With a career spanning over two decades, Nace Rossi has established himself as a leading figure in the tech industry, with a keen focus on developing solutions that address real-world problems. His innovative spirit and dedication to excellence have earned him numerous accolades and awards.

Collaborations: Throughout his career, Nace Rossi has collaborated with top research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: Nace Rossi's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the field of technology. His inventive spirit continues to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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