The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 29, 2006
Nace Rossi, Singapore, SG;
Ranbir Singh, Singapore, SG;
Nace Rossi, Singapore, SG;
Ranbir Singh, Singapore, SG;
Agere Systems Inc., Allentown, PA (US);
Abstract
The invention, in one aspect, provides a method of manufacturing a semiconductor device. This method includes providing a semiconductor substrate and depositing a metal layer over the semiconductor substrate that has an overall thickness of about 1 micron or greater. The metal layer is formed by depositing a first portion of the thickness of the metal layer, which has a compressive or tensile stress associated therewith over the semiconductor substrate. A stress-compensating layer is deposited over the first portion, such that the stress-compensating layer imparts a stress to the first portion that is opposite to the compressive or tensile stress associated with the first portion. A second portion of the thickness of the metal layer is then deposited over the stress-compensating layer.