The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jan. 21, 2009
Applicants:
Arun K. Nanda, Orlando, FL (US);
Nace Rossi, Singapore, SG;
Ranbir Singh, Singapore, SG;
Inventors:
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation structure. The voids may be formed during a wet clean process after the dielectric material is formed in the trench. A conformal silicon nitride layer is formed over the substrate and in the voids. After removal of the silicon nitride layer, the voids are at least partially filled by the silicon nitride material.