The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

Feb. 14, 2007
Applicants:

Alan S. Chen, Windermere, FL (US);

Mark Dyson, Singapore, SG;

Nace M. Rossi, Singapore, SG;

Ranbir Singh, Singapore, SG;

Xiaojun Yuan, Singapore, SG;

Inventors:

Alan S. Chen, Windermere, FL (US);

Mark Dyson, Singapore, SG;

Nace M. Rossi, Singapore, SG;

Ranbir Singh, Singapore, SG;

Xiaojun Yuan, Singapore, SG;

Assignee:

Agere Systems Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention, in one aspect, provides a method for fabricating a semiconductor device. In one aspect, the method provides for a dual implantation of a tub of a bipolar transistor. The tub in bipolar region is implanted by implanting the tub through separate implant masks that are also used to implant tubs associated with MOS fabricate different voltage devices in a non-bipolar region during the fabrication of MOS transistors.


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