The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jun. 02, 2009
Alan S. Chen, Windermere, FL (US);
Mark Dyson, Singapore, SG;
Nace M. Rossi, Singapore, SG;
Ranbir Singh, Singapore, SG;
Alan S. Chen, Windermere, FL (US);
Mark Dyson, Singapore, SG;
Nace M. Rossi, Singapore, SG;
Ranbir Singh, Singapore, SG;
Agere Systems, Inc., Allentown, PA (US);
Abstract
The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer.