The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Aug. 31, 2011
Applicants:

Mark Dyson, Singapore, SG;

Daniel C. Kerr, Oak Ridge, NC (US);

Nace M. Rossi, Singapore, SG;

Inventors:

Mark Dyson, Singapore, SG;

Daniel C. Kerr, Oak Ridge, NC (US);

Nace M. Rossi, Singapore, SG;

Assignee:

Agere Systems LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a base within the collector, forming a patterned isolation layer over the collector and base, forming an emitter layer over the patterned isolation layer, forming an isolation layer over the emitter layer, patterning the patterned isolation layer, the emitter layer and the isolation layer to form at least one emitter structure having an isolation region located on a sidewall thereof, and forming a buried contact in the collector to a depth sufficient to adequately contact the collector.


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