Moshe Agam

This inventor holds 22 USPTO granted patents and 5 published patent applications and 1 EPO patent. Top assignees: Semiconductor Components Industries, LLC, Lattice Semiconductor Corporation. Active years: 2008-2024.

USPTO Granted Patents = 22 (Patent Applications = 5)

% Patents Active = 95.5

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 54(Granted Patents)

Company Filing History:

20 out of 3,712

Semiconductor Components Industries, LLC

patents

2 out of 764

Lattice Semiconductor Corporation

patents

Years Active: 2008-2024

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22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12125923 - High voltage diode on SOI substrate with trench-modified current path (2024-10-22),

2. 11289570 - Semiconductor device having optimized drain termination and method therefor (2022-03-29),

3. 11251263 - Electronic device including a semiconductor body or an isolation structure within a trench (2022-02-15),

4. 10971632 - High voltage diode on SOI substrate with trench-modified current path (2021-04-06),

5. 10896954 - Electronic device including a drift region (2021-01-19),

6. 10818516 - Semiconductor device having biasing structure for self-isolating buried layer and method therefor (2020-10-27),

7. 10497780 - Circuit and an electronic device including a transistor and a component and a process of forming the same (2019-12-03),

8. 10490549 - Isolation structure for semiconductor device having self-biasing buried layer and method therefor (2019-11-26),

9. 10276556 - Semiconductor device having biasing structure for self-isolating buried layer and method therefor (2019-04-30),

10. 10224323 - Isolation structure for semiconductor device having self-biasing buried layer and method therefor (2019-03-05),

11. 10153213 - Process of forming an electronic device including a drift region, a sinker region and a resurf region (2018-12-11),

12. 10026728 - Semiconductor device having biasing structure for self-isolating buried layer and method therefor (2018-07-17),

13. 9923092 - Method of forming a semiconductor device (2018-03-20),

14. 9478607 - Electronic device including an isolation structure (2016-10-25),

15. 9245952 - Method of forming a semiconductor device and structure therefor (2016-01-26),

Title: The Innovative Mind of Moshe Agam

Introduction: Moshe Agam, a talented inventor based in Portland, Oregon, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Moshe Agam holds several patents in the realm of renewable energy technologies, including a recent patent for a solar panel design that maximizes energy efficiency.

Career Highlights: With a career spanning over two decades, Moshe Agam has been at the forefront of developing cutting-edge solutions for sustainable energy production. His work has revolutionized the way we harness and utilize renewable resources.

Collaborations: Throughout his career, Moshe Agam has collaborated with leading research institutions and universities to further advance the field of renewable energy. His partnerships have led to significant breakthroughs in the industry.

Conclusion: Moshe Agam's dedication to innovation and sustainability has solidified his reputation as a pioneering inventor in the field of renewable energy. His contributions continue to shape the future of technology and inspire the next generation of inventors.