The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Oct. 27, 2014
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Moshe Agam, Portland, OR (US);

Thierry Coffi Herve Yao, Portland, OR (US);

Matthew Comard, West Linn, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G01R 33/07 (2006.01); H01L 29/78 (2006.01); H01L 43/06 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); G01R 33/07 (2013.01); G01R 33/077 (2013.01); H01L 29/0619 (2013.01); H01L 29/66659 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 43/065 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01);
Abstract

An electronic device can include a semiconductor layer having a primary surface, and an isolation structure. The isolation structure can include a first well region within the semiconductor layer and having a first conductivity, a second well region within the semiconductor layer and having a second conductivity type opposite the first conductivity type, and a third well region within the semiconductor layer having the first conductivity type. The second well region can be disposed between the first and third well regions. The first, second, and third well regions can be electrically connected to one another. The electronic device can help to allow more electrons during an electrostatic discharge or similar event to flow where the electrons will be less problematic. A process of forming the electronic device may be implemented with changes to existing masks without adding any processing operations.


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