The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jun. 24, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Jaroslav Pjencak, Dolni Becva, CZ;
Moshe Agam, Portland, OR (US);
Johan Camiel Julia Janssens, Asse, BE;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 21/76289 (2013.01); H01L 21/76291 (2013.01); H01L 29/0649 (2013.01); H01L 29/402 (2013.01); H01L 29/6609 (2013.01); H01L 29/7824 (2013.01);
Abstract
A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.