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For the Inventor, By the Inventor

Asse, Belgium

Johan Camiel Julia Janssens

USPTO Granted Patents = 31 

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 59(Granted Patents)


Company Filing History:

goldMedal30 out of 3,590 
 
Semiconductor Components Industries, LLC
 patents
silverMedal1 out of 17 
 
Ami Semiconductor Belgium Bvba
 patents

Years Active: 2007-2024

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31 patents (USPTO):
1. 12125923 - High voltage diode on SOI substrate with trench-modified current path (2024-10-22),
2. 11289570 - Semiconductor device having optimized drain termination and method therefor (2022-03-29),
3. 11251263 - Electronic device including a semiconductor body or an isolation structure within a trench (2022-02-15),
4. 11114493 - Image sensors with vertically stacked photodiodes and vertical transfer gates (2021-09-07),
5. 11108390 - Method of forming a semiconductor device and circuit therefor (2021-08-31),
6. 11079413 - Methods and related systems of a readout circuit for use with a wheatstone bridge sensor (2021-08-03),
7. 11063564 - Bidirectional leakage compensation circuits for use in integrated circuits and method therefor (2021-07-13),
8. 11031349 - Method of forming a semiconductor device and current sensing circuit therefor (2021-06-08),
9. 11018129 - Circuit that changes voltage of back electrode of transistor based on error condition (2021-05-25),
10. 10971632 - High voltage diode on SOI substrate with trench-modified current path (2021-04-06),
11. 10818516 - Semiconductor device having biasing structure for self-isolating buried layer and method therefor (2020-10-27),
12. 10756616 - Methods and systems of a rectifier circuit (2020-08-25),
13. 10615217 - Image sensors with vertically stacked photodiodes and vertical transfer gates (2020-04-07),
14. 10497780 - Circuit and an electronic device including a transistor and a component and a process of forming the same (2019-12-03),
15. 10490549 - Isolation structure for semiconductor device having self-biasing buried layer and method therefor (2019-11-26),

Title: The Innovative Journey of Johan Camiel Julia Janssens

Introduction

Johan Camiel Julia Janssens, an accomplished inventor based in Asse, Belgium, holds an impressive portfolio of 31 patents. His contributions to the semiconductor industry are noteworthy, demonstrating a commitment to innovation and advancement in technology.

Latest Patents

Among his latest inventions are two significant patents. The first, titled "High voltage diode on SOI substrate with trench-modified current path," details a semiconductor device that incorporates a Silicon on Insulator (SOI) substrate. This device features a diode that includes a cathode region and an anode region, as well as a breakdown voltage trench positioned strategically at the edge of the cathode region.

The second patent is for a "Semiconductor device having optimized drain termination and method therefor." This invention focuses on a semiconductor device featuring a substrate with carefully arranged doped regions and a trench isolation structure designed to enhance performance by connecting the conductive trench filling to the drain region.

Career Highlights

Johan has built a successful career with leading companies in the semiconductor field, including Semiconductor Components Industries, LLC and Ami Semiconductor Belgium Bvba. His work at these organizations has significantly impacted the development of new semiconductor technologies.

Collaborations

Throughout his career, Johan has collaborated with other talented professionals, including Moshe Agam and Jaroslav Pjencak. Such partnerships have enabled the exchange of ideas and fostered innovative solutions within the industry.

Conclusion

Johan Camiel Julia Janssens exemplifies the spirit of innovation through his extensive patent portfolio and commitment to technological advancement in semiconductors. His work not only contributes to the field but also inspires future inventors to pursue their own paths of discovery.

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