The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Apr. 24, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 23/556 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/556 (2013.01); H01L 23/576 (2013.01);
Abstract

In one embodiment, a method of forming a semiconductor device may include forming a sensing circuit to apply a voltage to a doped region wherein the voltage expands depletion region toward a second depletion region but substantially does not intersect the second depletion region. An embodiment may include configuring the sensing circuit to detect electrons within the doped region and to responsively assert a detection signal representing detection of the electrons wherein the sensing circuit detects the electrons while applying the voltage to the second doped region.


Find Patent Forward Citations

Janssens, Johan Camiel Julia. (2021). Method of forming a semiconductor device and current sensing circuit therefor (U.S. Patent No. 11031349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031349

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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