The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Aug. 27, 2015
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Moshe Agam, Portland, OR (US);
Ladislav {hacek over (S)}eliga, Francova Lhota, CZ;
Thierry Coffi Herve Yao, Portland, OR (US);
Jaroslav Pjen{hacek over (c)}ák, Dolní Be{hacek over (c)}va, CZ;
Gary H. Loechelt, Tempe, AZ (US);
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
An electronic device can include a semiconductor layer having a primary surface, a drift region adjacent to the primary surface, a drain region adjacent to the drift region and extending deeper into the semiconductor layer as compared to the drift region, a resurf region spaced apart from the primary surface, an insulating layer overlying the drain region, and a contact extending through the insulating layer to the drain region. In an embodiment, the drain region can include a sinker region that allows a bulk breakdown to the resurf region to occur during an overvoltage event where the bulk breakdown occurs outside of the drift region, and in a particular embodiment, away from a shallow trench isolation structure or other sensitive structure.