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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Minxian Max Zhang

USPTO Granted Patents = 47 

 

Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 78(Granted Patents)


Location History:

  • Palo Alto, CA (US) (2016 - 2018)
  • Mountain View, CA (US) (2012 - 2021)
  • Newark, CA (US) (2020 - 2023)
  • Amherst, MA (US) (2024)

Company Filing History:

goldMedal19 out of 52 
 
Tetramem Inc.
 patents
silverMedal15 out of 27,394 
 
Hewlett-packard Development Company, L.p.
 patents
bronzeMedal9 out of 5,249 
 
Hewlett Packard Enterprise Development LP
 patents
4. 1 out of 1 
 
Tetramen Inc.
 patent
5. 3 out of 832,680 
Other
 patents

Years Active: 2012-2025

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47 patents (USPTO):
1. 12490441 - Tunneling-based selectors incorporating van der Waals (vdW) materials (2025-12-02),
2. 12484462 - Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation (2025-11-25),
3. 12477963 - CMOS-compatible resistive random-access memory devices with a via device structure (2025-11-18),
4. 12471298 - Ferroelectric non-volatile memory devices (2025-11-11),
5. 12396375 - Resistive random-access memory devices with engineered electronic defects and methods for making the same (2025-08-19),
6. 12382847 - Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers (2025-08-05),
7. 12302768 - Resistive random-access memory devices with multi-component electrodes (2025-05-13),
8. 12232332 - Integrated sensing and machine learning processing devices (2025-02-18),
9. 12213390 - Resistive random-access memory devices with multi-component electrodes (2025-01-28),
10. 12137622 - Forming-free random-access memory (RRAM) devices (2024-11-05),
11. 12127487 - Low current RRAM-based crossbar array circuits implemented with interface engineering technologies (2024-10-22),
12. 12120887 - Increasing selector surface area in crossbar array circuits (2024-10-15),
13. 11985911 - Methods for fabricating resistive random-access memory stacks (2024-05-14),
14. 11616196 - Low current RRAM-based crossbar array circuit implemented with switching oxide engineering technologies (2023-03-28),
15. 11532668 - Increasing selector surface area in crossbar array circuits (2022-12-20),

Title: The Innovative Journey of Minxian Max Zhang

Introduction: Minxian Max Zhang is a visionary inventor based in Palo Alto, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Zhang holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Zhang has led numerous successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Zhang has collaborated with leading tech companies, research institutions, and universities to further his research and bring his inventions to life. His ability to work across disciplines has led to the development of cutting-edge technologies.

Conclusion: Minxian Max Zhang's relentless pursuit of innovation and his commitment to creating a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the landscape of innovation for years to come.

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