The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Nov. 15, 2021
Tetramem Inc., Newark, CA (US);
Minxian Zhang, Newark, CA (US);
Ning Ge, Newark, CA (US);
TetraMem Inc., San Jose, CA (US);
Abstract
The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, a first interface layer fabricated on the first electrode; a switching oxide layer fabricated on the first interface layer; and a second electrode fabricated on the switching oxide layer. The switching oxide layer includes a transition metal oxide. The first interface layer includes a discontinuous film of a first material that is more chemically stable than the transition metal oxide. The RRAM device may further include a second interface layer positioned between the switching oxide layer and the second electrode. The second interface layer includes a discontinuous film of a second material that is more chemically stable than the transition metal oxide. The second electrode may include multiple electrode components that may include an alloy, a first layer of a first metallic material, and/or a second layer of a second metallic material.