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For the Inventor, By the Inventor

San Jose, CA, United States of America

Tetramem Inc.


USPTO Granted Patents = 62


Trademarks = 13

Forward Citations = 21

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12 inventors (with patents filed for the assignee):

goldMedal Ning Ge (56 out of 190 patents)

silverMedal Minxian Max Zhang (24 out of 52 patents)

bronzeMedal Wenbo Yin (10 out of 10 patents)

4.  Mingche Wu (6 out of 6 patents)

5.  Miao Hu (5 out of 28 patents)

6.  Hengfang Zhu (5 out of 5 patents)

7.  Gong Lei (2 out of 2 patents)

8.  Qiang Wei (2 out of 2 patents)

9.  Lei Liu (1 out of 3 patents)

10.  Mingyi Rao (1 out of 1 patent)

11.  Jun Sheng Ng (1 out of 1 patent)

12.  Yudi Dou (1 out of 1 patent)


Core Competencies:
RRAM Devices
Crossbar Circuits
Error Correction
Memory Devices
Analog Computing
Multi-Level Cells
Interface Layers
Programming Schemes
Voltage Mode
Ferroelectric Memory
ADC Converters
Neural Networks

62 patents:

1. 12713842 - LOW CURRENT RRAM-BASED CROSSBAR ARRAY CIRCUIT IMPLEMENTED WITH SWITCHING OXIDE ENGINEERING TECHNOLOGIES (2026-08-18),
2. 12696691 - Resistive random-access memory (RRAM) devices with interface layers (2026-07-28),
3. 12658277 - Enhanced error correction code for error detection and correction in multi-level cell-based memory devices (2026-06-16),
4. 12610752 - Resistive random-access memory devices with a via device structure (2026-04-21),
5. 12603117 - Crossbar circuits utilizing current-mode digital-to-analog converters (2026-04-14),
6. 12586642 - Mechanisms for programming multilevel memory devices with variable memory windows (2026-03-24),
7. 12548631 - Crossbar circuits including RRAM devices with minimized write disturbances (2026-02-10),
8. 12543514 - Resistive random-access memory devices with metal-nitride compound electrodes (2026-02-03),
9. 12525290 - Read-out circuits for RRAM-based crossbar circuits (2026-01-13),
10. 12512154 - Analog in-memory discrete signal processor with minimum usage of ADC (2025-12-30),
11. 12490441 - Tunneling-based selectors incorporating van der Waals (vdW) materials (2025-12-02),
12. 12484462 - Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation (2025-11-25),
13. 12477963 - CMOS-compatible resistive random-access memory devices with a via device structure (2025-11-18),
14. 12475947 - Reducing disturbance in crossbar array circuits (2025-11-18),
15. 12471298 - Ferroelectric non-volatile memory devices (2025-11-11),
Tetramem Inc., based in San Jose, CA, specializes in advanced resistive memory technologies, focusing on the development of resistive random-access memory (RRAM) devices. The company is at the forefront of innovation in crossbar circuits and error correction techniques, enhancing the performance and reliability of memory devices. With a strong emphasis on analog computing and multi-level cell architectures, Tetramem aims to revolutionize data storage solutions, providing efficient and scalable memory systems for various applications.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

Tetramem Inc.
62 Patents

#163 in San Jose, CA

#1,367 in California

#5,840 in US

#11,755 in the World

San Jose, CA (US)
San Jose, CA, United States of America

Tetramem Inc.

Forward Citations = 21

12 inventors:

goldMedal Ning Ge (56 out of 190 patents)

silverMedal Minxian Max Zhang (24 out of 52 patents)

bronzeMedal Wenbo Yin (10 out of 10 patents)

4.  Mingche Wu (6 out of 6 patents)

5.  Miao Hu (5 out of 28 patents)

Please report any incorrect information to [email protected]
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