For the Inventor, By the Inventor

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Fremont, CA, United States of America

Tetramem Inc.

USPTO Granted Patents = 53

Trademarks = 13

Forward Citations = 19

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9 inventors (with patents filed for the assignee):

Ning Ge (49 out of 183 patents)

Minxian Max Zhang (19 out of 47 patents)

Wenbo Yin (9 out of 9 patents)

4. Miao Hu (5 out of 28 patents)

5. Mingche Wu (3 out of 3 patents)

6. Hengfang Zhu (2 out of 2 patents)

7. Gong Lei (1 out of 1 patent)

8. Qiang Wei (1 out of 1 patent)

9. Mingyi Rao (1 out of 1 patent)

Core Competencies:

Tunneling Devices

Resistive Random-Access Memory

Crossbar Array Circuits

Ferroelectric Memory Devices

Machine Learning Processing

Analog to Digital Converters

Neural Networks

Memristive Devices

Voltage-Mode Circuits

Interface Engineering

Convolution Operations

Proton-Based Devices

53 patents: Sort by Forward Citations

1. 12512154 - Analog in-memory discrete signal processor with minimum usage of ADC (2025-12-30),

2. 12490441 - Tunneling-based selectors incorporating van der Waals (vdW) materials (2025-12-02),

3. 12484462 - Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation (2025-11-25),

4. 12477963 - CMOS-compatible resistive random-access memory devices with a via device structure (2025-11-18),

5. 12475947 - Reducing disturbance in crossbar array circuits (2025-11-18),

6. 12471298 - Ferroelectric non-volatile memory devices (2025-11-11),

7. 12451186 - Multi-step programming schemes for programming crossbar circuits (2025-10-21),

8. 12443675 - Crossbar circuits for performing convolution operations (2025-10-14),

9. 12433176 - Large-scale crossbar arrays with reduced series resistance (2025-09-30),

10. 12431179 - Code comparators with nonpolar dynamical switches (2025-09-30),

11. 12406726 - Suppressing random telegraph noise in crossbar circuits (2025-09-02),

12. 12406723 - Voltage-mode crossbar circuits (2025-09-02),

13. 12396375 - Resistive random-access memory devices with engineered electronic defects and methods for making the same (2025-08-19),

14. 12382847 - Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers (2025-08-05),

15. 12354655 - Transimpedance amplifiers for crossbar circuits (2025-07-08),

TetraMem Inc. is a leading provider of advanced memory solutions for various industries. We specialize in developing next-generation memory technologies that offer higher storage capacities, enhanced energy efficiency, and faster data access speeds. Our innovative products cater to a wide range of applications, including data centers, artificial intelligence, autonomous vehicles, and IoT devices. With a strong commitment to research and development, TetraMem Inc. strives to revolutionize the memory industry by pushing the boundaries of what is possible.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

53 Patents

#41 in Fremont, CA

#1,525 in California

#6,447 in US

#12,953 in the World

Fremont, CA, United States of America

Tetramem Inc.

Forward Citations = 19

9 inventors:

Ning Ge (49 out of 183 patents)

Minxian Max Zhang (19 out of 47 patents)

Wenbo Yin (9 out of 9 patents)

4. Miao Hu (5 out of 28 patents)

5. Mingche Wu (3 out of 3 patents)

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