For the Inventor, By the Inventor

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San Jose, CA, United States of America

Tetramem Inc.

USPTO Granted Patents = 62

EPO Patents = 1

Trademarks = 13

Forward Citations = 21

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12 inventors (with patents filed for the assignee):

Ning Ge (56 out of 190 patents)

Minxian Max Zhang (24 out of 52 patents)

Wenbo Yin (10 out of 10 patents)

4. Mingche Wu (6 out of 6 patents)

5. Miao Hu (5 out of 28 patents)

6. Hengfang Zhu (5 out of 5 patents)

7. Gong Lei (2 out of 2 patents)

8. Qiang Wei (2 out of 2 patents)

9. Lei Liu (1 out of 3 patents)

10. Mingyi Rao (1 out of 1 patent)

11. Jun Sheng Ng (1 out of 1 patent)

12. Yudi Dou (1 out of 1 patent)

Core Competencies:

RRAM Devices

Crossbar Circuits

Error Correction

Memory Devices

Analog Computing

Multi-Level Cells

Interface Layers

Programming Schemes

Voltage Mode

Ferroelectric Memory

ADC Converters

Neural Networks

62 patents: Sort by Forward Citations

1. 12713842 - LOW CURRENT RRAM-BASED CROSSBAR ARRAY CIRCUIT IMPLEMENTED WITH SWITCHING OXIDE ENGINEERING TECHNOLOGIES (2026-08-18),

2. 12696691 - Resistive random-access memory (RRAM) devices with interface layers (2026-07-28),

3. 12658277 - Enhanced error correction code for error detection and correction in multi-level cell-based memory devices (2026-06-16),

4. 12610752 - Resistive random-access memory devices with a via device structure (2026-04-21),

5. 12603117 - Crossbar circuits utilizing current-mode digital-to-analog converters (2026-04-14),

6. 12586642 - Mechanisms for programming multilevel memory devices with variable memory windows (2026-03-24),

7. 12548631 - Crossbar circuits including RRAM devices with minimized write disturbances (2026-02-10),

8. 12543514 - Resistive random-access memory devices with metal-nitride compound electrodes (2026-02-03),

9. 12525290 - Read-out circuits for RRAM-based crossbar circuits (2026-01-13),

10. 12512154 - Analog in-memory discrete signal processor with minimum usage of ADC (2025-12-30),

11. 12490441 - Tunneling-based selectors incorporating van der Waals (vdW) materials (2025-12-02),

12. 12484462 - Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation (2025-11-25),

13. 12477963 - CMOS-compatible resistive random-access memory devices with a via device structure (2025-11-18),

14. 12475947 - Reducing disturbance in crossbar array circuits (2025-11-18),

15. 12471298 - Ferroelectric non-volatile memory devices (2025-11-11),

Company Overview

Tetramem Inc., based in San Jose, CA, specializes in advanced resistive memory technologies, focusing on the development of resistive random-access memory (RRAM) devices. The company is at the forefront of innovation in crossbar circuits and error correction techniques, enhancing the performance and reliability of memory devices. With a strong emphasis on analog computing and multi-level cell architectures, Tetramem aims to revolutionize data storage solutions, providing efficient and scalable memory systems for various applications.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

62 Patents

#163 in San Jose, CA

#1,369 in California

#5,848 in US

#11,779 in the World

San Jose, CA, United States of America

Tetramem Inc.

Forward Citations = 21

12 inventors:

Ning Ge (56 out of 190 patents)

Minxian Max Zhang (24 out of 52 patents)

Wenbo Yin (10 out of 10 patents)

4. Mingche Wu (6 out of 6 patents)

5. Miao Hu (5 out of 28 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Tetramem Inc.. Retrieved from https://idiyas.com/company/tetramem

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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