The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Dec. 20, 2023
Applicant:

Tetramem Inc., Fremont, CA (US);

Inventors:

Lei Liu, Singapore, SG;

Jun Sheng Ng, Singapore, SG;

Yudi Dou, Singapore, SG;

Qiang Wei, San Ramon, CA (US);

Assignee:

TETRAMEM INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/52 (2006.01); G11C 13/00 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 13/0033 (2013.01); G11C 29/022 (2013.01);
Abstract

Methods for enhanced error correction code for error detection and correction in multi-level cell-based memory devices are provided. The methods include receiving, at an error correction code (ECC) decoder hardware device, data encoded with ECC information from a multi-level cell-based memory device; calculating an error value and an error location for an error in the data using Reed-Solomon (RS) error correction code (ECC); determining an error type of the error, wherein the error type comprises one of no error, a single symbol error in the data, or multiple symbol errors in the data, and wherein determining the error type is based on a +1/−1 error constraint; and responsive to the error type comprising multiple symbol errors, repeating a read of the data from the multi-level cell-based memory device.


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