The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jun. 17, 2022
Applicant:

Tetramem Inc., Fremont, CA (US);

Inventors:

Minxian Zhang, Amherst, MA (US);

Mingche Wu, Newark, CA (US);

Ning Ge, Danville, CA (US);

Assignee:

TetraMem Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/8833 (2023.02);
Abstract

The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, an RRAM device includes: a first electrode including a metal nitride; a second electrode comprising a first conductive material; and a switching oxide layer positioned between the first electrode and the second electrode. The switching oxide layer includes at least one transition metal oxide. In some embodiments, the metal nitride in the first electrode includes titanium nitride and/or tantalum nitride. The first electrode does not include a non-reactive metal, such as platinum (Pt), palladium (Pd), etc.


Find Patent Forward Citations

Zhang, Minxian. (2026). Resistive random-access memory devices with metal-nitride compound electrodes (U.S. Patent No. 12543514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543514

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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