The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jul. 15, 2022
Tetramem Inc., Fremont, CA (US);
TetraMem Inc., Fremont, CA (US);
Abstract
A method for fabricating a forming-free resistive random-access memory (RRAM) device is provided. The method includes: fabricating an RRAM cell and annealing the RRAM cell. The RRAM cell includes: a bottom electrode, a switching oxide layer comprising at least one transition metal oxide; a top electrode, and an interface between the switching oxide layer and the top electrode. In some embodiments, the at least one transition metal oxide includes at least one of HfOor TaO, wherein x≤2.0, and wherein y≤2.5. The interface layer comprises a layer of at least one of AlO, MgO, YO, or LaO. The forming-free RRAM device may be switched to multiple resistance levels without a forming process.