Mingmei Wang

This inventor holds 24 USPTO granted patents and 10 published patent applications, primarily in Plasma Etching Technology. Top assignees: Tokyo Electron Limited, Université D'orleans. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mingmei Wang. Retrieved from https://idiyas.com/inventor/mingmei-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24 (Patent Applications = 10)

% Patents Active = 79.2

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 39(Granted Patents)

Company Filing History:

24 out of 10,918

Tokyo Electron Limited

where one patent can have more than one assignee

Years Active: 2017-2026

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Areas of Expertise:

Atomic Layer Deposition

Plasma Processing

Selective Etching

Dielectric Etching

Silicon Nitride

Silicon Oxide

High Aspect Ratio Etching

In-Situ Adsorbate

Proton-Mediated Catalyst

Cyclic Plasma Etching

Patterning Features

Passivation Layer

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696695 - Atomic layer deposition of passivation layer (2026-07-28),

2. 12666893 - Sidewall inorganic passivation for dielectric etching via surface modification (2026-06-23),

3. 12635434 - High aspect ratio contact etching with additive gas (2026-05-19),

4. 12622234 - Selective in-situ carbon-based mask protection (2026-05-05),

5. 12424447 - Method to selectively etch silicon nitride to silicon oxide using water crystallization (2025-09-23),

6. 12400863 - Method for etching for semiconductor fabrication (2025-08-26),

7. 12308212 - In-situ adsorbate formation for plasma etch process (2025-05-20),

8. 12237172 - Etch process for oxide of alkaline earth metal (2025-02-25),

9. 12131914 - Selective etching with fluorine, oxygen and noble gas containing plasmas (2024-10-29),

10. 12131887 - Plasma processing system and method using radio frequency and microwave power (2024-10-29),

11. 11887815 - Plasma processing system and method using radio frequency (RF) and microwave power (2024-01-30),

12. 11837471 - Methods of patterning small features (2023-12-05),

13. 11804380 - High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation (2023-10-31),

14. 11538692 - Cyclic plasma etching of carbon-containing materials (2022-12-27),

15. 11232954 - Sidewall protection layer formation for substrate processing (2022-01-25),

Title: The Innovative Mind of Mingmei Wang: A Pioneer in Plasma Processing Technology

Introduction: Mingmei Wang is a distinguished inventor based in Albany, NY, renowned for his contributions to the field of plasma processing technology. With an impressive portfolio of 17 patents, Wang has made significant strides, particularly in methods of substrate processing that are essential for various applications in semiconductor manufacturing.

Latest Patents: Two of Mingmei Wang's latest patents exemplify his innovative approach to plasma processing. The first patent, titled "Etch Process for Oxide of Alkaline Earth Metal," describes a method for processing a substrate with an oxide of an alkaline earth metal. This process involves loading the substrate into a plasma processing chamber, flowing a process gas, and forming a fluorine-free plasma to effectively etch the oxide on the substrate's surface. His second groundbreaking patent, "Selective Etching with Fluorine, Oxygen, and Noble Gas Containing Plasmas," outlines a cyclic plasma etch process that enhances substrate processing through the generation of dual plasmas for deposition and etching steps.

Career Highlights: Throughout his career, Mingmei Wang has worked with prestigious organizations, including Tokyo Electron Limited and Université D'Orléans. His work in these companies has allowed him to refine his expertise and contribute significantly to advancements in plasma processing technologies.

Collaborations: Mingmei Wang's innovative journey has been marked by collaboration with prominent colleagues, including Du Zhang and Yu-Hao Tsai. This teamwork reflects the collaborative spirit of research and innovation that drives advances in technology and science.

Conclusion: With his impressive array of patents and a solid foundation in plasma processing technology, Mingmei Wang stands out as a leading inventor in his field. His contributions are not only valuable for the companies he has worked for but also play a crucial role in shaping the future of semiconductor technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

10 patents pending: