The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Nov. 09, 2021
Tokyo Electron Limited, Tokyo, JP;
Université D'orléans, Orléans, FR;
Du Zhang, Albany, NY (US);
Hojin Kim, Albany, NY (US);
Shigeru Tahara, Taiwa-cho, JP;
Kaoru Maekawa, Albany, NY (US);
Mingmei Wang, Albany, NY (US);
Jacques Faguet, Austin, TX (US);
Remi Dussart, Orléans, FR;
Thomas Tillocher, Orléans, FR;
Philippe Lefaucheux, Orléans, FR;
Gaëlle Antoun, Orléans, FR;
Tokyo Electron Limited, Tokyo, JP;
Université d'Orleans, Orléans, FR;
Abstract
A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.