The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Mar. 25, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Yu-Hao Tsai, Albany, NY (US);
Du Zhang, Albany, NY (US);
Mingmei Wang, Albany, NY (US);
Takatoshi Orui, Taiwa-cho, JP;
Motoi Takahashi, Taiwa-cho, JP;
Masahiko Yokoi, Taiwa-cho, JP;
Koki Tanaka, Taiwa-cho, JP;
Yoshihide Kihara, Taiwa-cho, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01);
Abstract
A method of processing a substrate includes patterning a mask over a dielectric layer and etching openings in the dielectric layer. The dielectric layer is disposed over the substrate. The etching includes flowing an etchant, a polar or H-containing gas, and a phosphorus-halide gas. The method may further include forming contacts by filling the openings with a conductive material.