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For the Inventor, By the Inventor

Albany, NY, United States of America

Yu-Hao Tsai

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal12 out of 10,295 
 
Tokyo Electron Limited
 patents

Years Active: 2021-2025

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12 patents (USPTO):
1. 12424447 - Method to selectively etch silicon nitride to silicon oxide using water crystallization (2025-09-23),
2. 12400863 - Method for etching for semiconductor fabrication (2025-08-26),
3. 12308212 - In-situ adsorbate formation for plasma etch process (2025-05-20),
4. 12287578 - Cyclic method for reactive development of photoresists (2025-04-29),
5. 12272558 - Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification (2025-04-08),
6. 11837471 - Methods of patterning small features (2023-12-05),
7. 11804380 - High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation (2023-10-31),
8. 11232954 - Sidewall protection layer formation for substrate processing (2022-01-25),
9. 11189499 - Atomic layer etch (ALE) of tungsten or other metal layers (2021-11-30),
10. 11158517 - Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing (2021-10-26),
11. 11152217 - Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition (2021-10-19),
12. 11024508 - Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching (2021-06-01),

Title: Yu-Hao Tsai: Innovator in Semiconductor Etching Technologies

Introduction

Yu-Hao Tsai is a prominent inventor based in Albany, NY (US), known for his significant contributions to semiconductor fabrication technologies. With a total of 12 patents to his name, Tsai has made remarkable advancements in the field of etching processes, particularly in the selective etching of silicon nitride.

Latest Patents

One of Tsai's latest patents is a method to selectively etch silicon nitride to silicon oxide using water crystallization. This innovative process involves a cyclic, two-step dry etch method that effectively protects oxide layers while selectively etching silicon nitride layers on a substrate. The first step utilizes hydrogen plasma to modify the surfaces of both the silicon nitride and oxide layers, creating a modified surface layer. The second step employs halogen plasma to remove the modified silicon nitride surface layer without affecting the oxide layer, thanks to a crystallized water layer formed during the first step. Another notable patent is a method for etching in semiconductor fabrication, which includes patterning a mask over a dielectric layer and etching openings in the dielectric layer using a combination of gases.

Career Highlights

Yu-Hao Tsai is currently employed at Tokyo Electron Limited, where he continues to develop cutting-edge technologies in semiconductor processing. His work has significantly impacted the efficiency and effectiveness of etching processes in the industry.

Collaborations

Tsai collaborates with talented coworkers, including Mingmei Wang and Du Zhang, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Yu-Hao Tsai's contributions to semiconductor etching technologies exemplify his dedication to innovation in the field. His patents reflect a deep understanding of material science and engineering, positioning him as a key figure in advancing semiconductor fabrication techniques.

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