The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Mar. 16, 2020
Tokyo Electron Limited, Tokyo, JP;
Yu-Hao Tsai, Albany, NY (US);
Mingmei Wang, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Substrate processing techniques are described in which an etch protection layer that is formed as part of an etch process forms in a self-limiting nature. Thus, over deposition effects are minimized, particularly in the corners of etched polygonal holes. In one embodiment, the layer being etched contains silicon and the protective layer comprises a silicon oxide (SixOy). The process may include the use of a cyclical series of etch and protective layer formation steps. In the case of a silicon oxide based protective layer, a thin protective layer of silicon oxide may be formed in a limiting and controllable manner due to the nature of the oxygen atom interaction with silicon and newly formed silicon oxide protective layers. In this manner, a polygonal hole may be formed without detrimental over deposition of a protective layer in corners of the hole.