Ming-Shih Tsai

Title: Innovations of Ming-Shih Tsai in Chemical Mechanical Planarization

Introduction

Ming-Shih Tsai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of chemical mechanical planarization (CMP), particularly in the semiconductor manufacturing industry. With a total of 7 patents, his work has advanced the technology used in polishing oxide materials and copper applications.

Latest Patents

Ming-Shih Tsai's latest patents include a chemical mechanical planarization composition for polishing oxide materials and a method of use thereof. This innovation involves polishing compositions that comprise ceria-coated silica particles and organic acids, which provide very high silicon oxide removal rates for advanced semiconductor device manufacturing. Another notable patent focuses on CMP compositions and methods for copper and through-silica via (TSV) applications. These formulations offer high and tunable copper removal rates while ensuring low copper dishing, making them suitable for both broad and advanced node copper applications.

Career Highlights

Throughout his career, Ming-Shih Tsai has worked with leading companies in the semiconductor industry, including Cabot Microelectronics Corporation and Versum Materials LLC. His expertise in CMP formulations has positioned him as a key player in the development of advanced polishing technologies.

Collaborations

Ming-Shih Tsai has collaborated with notable professionals in his field, including Francesco De Rege Thesauro and Steven Grumbine. These collaborations have further enhanced his contributions to CMP technology and innovation.

Conclusion

Ming-Shih Tsai's work in chemical mechanical planarization has significantly impacted the semiconductor manufacturing industry. His innovative patents and collaborations demonstrate his commitment to advancing technology in this critical field.