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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11718767 B1

PDFFull Text
Date of Patent:
Aug. 08, 2023

Filed:

Aug. 06, 2019

Chemical mechanical planarization composition for polishing oxide materials and method of use thereof

Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Ming-Shih Tsai, Hsinchu, TW;

Chia-Chien Lee, Hsinchu, TW;

Rung-Je Yang, Hsinchu, TW;

Anu Mallikarjunan, Hsinchu, TW;

Chris Keh-Yeuan Li, Hsinchu, TW;

Hongjun Zhou, Chandler, AZ (US);

Joseph D. Rose, Gilbert, AZ (US);

Xiaobo Shi, Chandler, AZ (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:

Lina Yang

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
C09G 1/02 (2006.01); C09K 13/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01); C09K 3/14 (2006.01); B24B 37/04 (2012.01); B24B 1/00 (2006.01); C09G 1/06 (2006.01); C09G 1/04 (2006.01); C09G 1/00 (2006.01); C09K 13/04 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 1/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); C09K 13/00 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); C09K 13/04 (2013.01);
Abstract

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

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