Cabot Microelectronics Corporation

Versum Materials Us, LLC

National Science Council

National Science Council of Republic of China

Ming-Shih Tsai

Francesco De Rege Thesauro

Steven Grumbine

Xiaobo Shi

Phillip W Carter

Shoutian Li

David Schroeder

Jian Zhang

Rung-Je Yang

Chris Keh-Yeuan Li

Ying-Lang Wang

Mark Leonard O'Neill

William J Ward

Kevin J Moeggenborg

Hongjun Zhou

Joseph D Rose

Laura M Matz

Shih-Tzung Chang

Bau-Tong Dai

Wei-Tsu Tseng

Agnes Derecskei

Blake J Lew

Pao-Chia Pan

Anu Mallikarjunan

Chia-Chien Lee

Chad Chang-Tse Hsieh

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Chemical mechanical planarization composition for polishing oxide materials and method of use thereof

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

CMP compositions and methods for suppressing polysilicon removal rates

The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Compositions for CMP of semiconductor materials

Compositions and methods for CMP of semiconductor materials

Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.

Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant

This invention provides metallic thin film chemical mechanical polishing slurry compositions having improved suspension stability. The slurry contains 2.5-10% by weight of alumina powder and 2-20% by volume of phosphoric acid (80% concentration ) solution, and using potassium hydroxide to adjust its pH to 1-6 so as to increase suspension ability of the alumina powder in the aqueous slurry. The polishing slurry compositions can further combine with suitable oxidizers such as hydrogen peroxide, ferric nitrate and so on to be appropriately used for chemical mechanical polishing metallic thin film in the process of manufacturing semiconductor in order to control abrasion rate and unevenness more easily.

Chemical mechanical polishing slurry for metallic thin film

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Hsinchu, Taiwan

Ming-Shih Tsai