Hsinchu, Taiwan

Ming-Shiang Lin

This inventor holds 20 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Shiang Lin. Retrieved from https://idiyas.com/inventor/ming-shiang-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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Areas of Expertise:
Negative Capacitance
Image Sensor
Ferroelectric Device
Semiconductor Structure
Fin Patterning
Testing Method
Dummy Gate
Manufacturing Method
20 patents (USPTO):Explore Patents

Title: The Innovations of Ming-Shiang Lin: A Pioneer in Semiconductor Technology

Introduction

Ming-Shiang Lin, located in Hsinchu, Taiwan, is an accomplished inventor renowned for his contributions to the field of semiconductor devices. With a remarkable portfolio of 17 patents, Lin's work has significantly advanced technology, particularly in the realm of ferroelectric materials and transistors.

Latest Patents

Among his latest patents, Lin introduced a **ferroelectric semiconductor device and method**. This innovative invention outlines a method that involves a diffusion anneal process to integrate dopants through an amorphous silicon layer into a gate dielectric layer. This technique results in a doped gate dielectric layer characterized by a gradient depth profile of dopant concentrations. The crystallization during the post-cap anneal process helps to achieve a unique gradient of ferroelectric properties within the crystallized gate dielectric layer. A metal gate electrode is then formed over this layer, creating a ferroelectric transistor with multi-ferroelectric properties, which has potential applications in deep neural networks (DNN).

Additionally, Lin also patented a method for a **semiconductor device featuring a fin end spacer dummy gate**. This patent describes a structure comprising first and second fins aligned over a substrate, encapsulated by an isolation insulating layer. The patent further details the arrangement of a first gate electrode and a source/drain epitaxial layer, highlighting the use of various materials, including silicon nitride and silicon carbon nitride, for the spacer dummy gate layer.

Career Highlights

Ming-Shiang Lin has made substantial contributions while working at Taiwan Semiconductor Manufacturing Company Limited, a leading name in the semiconductor industry. His innovative approach and dexterity in semiconductor technology have earned him recognition and respect among his peers.

Collaborations

Lin collaborates with talented colleagues, including Chia-Cheng Ho and Cheng-Yi Peng. Their combined expertise and innovative spirit foster a collaborative environment, leading to groundbreaking advancements in semiconductor technologies.

Conclusion

With 17 patents to his name, Ming-Shiang Lin is a vital figure in the realm of semiconductor innovations. His contributions, particularly in ferroelectric devices, position him at the forefront of technology, impacting various applications, including deep neural networks. As the semiconductor industry continues to evolve, Lin's ongoing work promises to drive further advancements that will shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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