The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 16, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ming-Shiang Lin, Hsinchu, TW;
Tzung-Yi Tsai, Taoyuan, TW;
Wan-Lin Chiang, Hsinchu, TW;
Hong-Ping Luo, Hsinchu, TW;
Kuo-Yu Wu, Hsinchu County, TW;
Tse-Hua Lu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device, a back-side deep trench isolation (BDTI) structure of a semiconductor device, and method of manufacturing a semiconductor structure are provided. The semiconductor device, comprising: a pixel region disposed within a substrate and comprising an image sensing element configured to convert electromagnetic radiation into an electrical signal; and one or more BDTI structures extending from a first-side of the substrate to positions within the substrate; wherein the one or more of BDTI structures comprise one or more ferroelectric materials.