The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jul. 10, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Ming-Shiang Lin, Hsinchu, TW;
Yun-Hao Chen, Hsinchu, TW;
Kuo-Yu Wu, Zhubei, TW;
Tse-Hua Lu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A plurality of photovoltaic junctions for a subpixel may be formed in a semiconductor substrate. After thinning the backside of the semiconductor substrate, at least one transparent refraction structure may be formed on the backside surface of the thinned semiconductor substrate. Each transparent refraction structure has a variable thickness that decreases with a lateral distance from a vertical axis passing through a geometrical center of the second-conductivity-type pillar structures for the subpixel. A subpixel optics assembly including an optical lens may be formed over the at least one transparent refraction structure. Each transparent refraction structure may reduce the tilt angle of light that propagate downward into the photodetectors, and increases total internal reflection of light and increase the efficiency of the photodetectors.