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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ming-Lun Chang

USPTO Granted Patents = 13 

Average Co-Inventor Count = 1.1

ph-index = 4

Forward Citations = 39(Granted Patents)


Company Filing History:

goldMedal13 out of 2,030 
 
Winbond Electronics Corporation
 patents

Years Active: 1999-2004

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13 patents (USPTO):Explore Patents
1. 6740570 - Method for forming a self-aligned silicide of a metal oxide semiconductor (2004-05-25),
2. 6245612 - Method for making the bottom electrode of a capacitor (2001-06-12),
3. 6242795 - Metal line structure and method of manufacturing the same (2001-06-05),
4. 6077739 - Methods for manufacturing DRAM capacitors (2000-06-20),
5. 6057590 - Structure of polysilicon load for static random access memory (2000-05-02),
6. 5985752 - Self-aligned via structure and method of manufacture (1999-11-16),
7. 5985520 - Metal line structure and method of manufacturing the same (1999-11-16),
8. 5970357 - Method and structure for manufacturing high-resistance polysilicon loads (1999-10-19),
9. 5950081 - Method of fabricating semiconductor (1999-09-07),
10. 5943567 - Method for preparing polysilicon load (1999-08-24),
11. 5937305 - Manufacturing method of polysilicon load for static random access memory (1999-08-10),
12. 5913142 - Method of improving the planarizaton of an inter-metal dielectric layer (1999-06-15),
13. 5891785 - Process for forming self-aligned silicide (1999-04-06),

Title: Innovations of Ming-Lun Chang

Introduction

Ming-Lun Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on improving the efficiency and reliability of metal oxide semiconductors.

Latest Patents

One of his latest patents is a method for forming a self-aligned silicide of a metal oxide semiconductor. This invention discloses a method that includes an ionic implanting step before the self-aligned silicidation process. The implanted ions, such as fluorine, chlorine, bromine, iodine, boron, and trifluroborane, react with the silicon on the surface of the gate structure and the silicon substrate. This reaction creates a barrier effect during silicidation, preventing the spike phenomenon caused by the penetration of cobalt or cobalt silicide into the gate structure or source/drain regions. As a result, junction leakage current and breakdown voltage issues in metal oxide semiconductors are effectively avoided.

Another notable patent is a method for making the bottom electrode of a buried capacitor. This invention protects the non-bottom electrode region with a LPD oxide layer, preventing impurities within the doped Si glass from diffusing into the substrate during annealing. This method effectively reduces the leakage current that is commonly found in conventional buried capacitors.

Career Highlights

Ming-Lun Chang is currently employed at Winbond Electronics Corporation, where he continues to innovate in semiconductor technology. His work has had a significant impact on the industry, enhancing the performance and reliability of various electronic devices.

Collaborations

He has collaborated with notable coworkers, including Wei-Fan Chen and Wen-Shiang Liao, contributing to advancements in their respective fields.

Conclusion

Ming-Lun Chang's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient and reliable electronic components.

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