The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jul. 01, 1997
Ming-lun Chang, Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A process for forming self-aligned silicide which is suitable for high-integrity processes after applying planarization technology. The present invention can protect the self-aligned silicide from being over-etched during subsequent contact etching process by means of forming a thicker silicide layer on the positions with shallower contact windows. At first, a polysilicon layer and a titanium layer are suquentially formed on a substrate having a field oxide, and defined to form a gate in an active region and a polysilicon line on the field oxide with titanium thereon. Then, impurities are implanted to form an LDD, an insulating layer is deposited and etched back to form a sidewall spacer of the gate and polysilicon line, and source/ drain regions are formed on the sides of the gate. After source/drain regions are formed, another titanium layer is formed so that titanium on the gate and polysilicon line is thicker than that on other regions. Accordingly, self-aligned silicide can be achieved by activating the reaction of titanium and silicon and selectively removing unreacted titanium.