The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Oct. 28, 1997
Ming-Lun Chang, Hsinchu, TW;
Winbond Electronics Corp., Taiwan, CN;
Abstract
A polysilicon load structure and its manufacturing method for static random access memory, comprising the steps of first providing a semiconductor substrate, and then forming a first insulating layer over the substrate. Next, a trench is etched out from the insulating layer forming a step structure. Thereafter, a polysilicon layer is formed over the first insulating layer, and then a global ion implantation operation is performed. Next, a photoresist layer is formed over the polysilicon layer, and then a connector pattern is defined using a microlithographic process. Thereafter, the polysilicon layer is anisotropically etched to form a spacer on the sidewall of the trench. Subsequently, a second ion implantation is performed to adjust the resistance of the connector. Finally, microlithographic and etching processes are used to remove the unwanted portions of the polysilicon spacer and exposing the polysilicon spacer structure and the polysilicon connector structure.