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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ming-Hung Wang

This inventor holds 21 USPTO granted patents, primarily in Memory Technology. Top assignees: Etron Technology, Inc., Piecemakers Technology, Inc., Moai Electronics Corporation. Active years: 2000-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Hung Wang. Retrieved from https://idiyas.com/inventor/ming-hung-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21

% Patents Active = 81.0

Average Co-Inventor Count = 1.8

ph-index = 7

Forward Citations = 505(Granted Patents)


Company Filing History:

goldMedal11 out of 304 
 
Etron Technology, Inc.
 patents
silverMedal8 out of 15 
 
Piecemakers Technology, Inc.
 patents
bronzeMedal1 out of 8 
 
Moai Electronics Corporation
 patents
4. 1 out of 1 
 
Piecemakers Technology, Incorporation
 patent

Years Active: 2000-2025

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Areas of Expertise:
Memory Module
DRAM Architecture
Power Management
Data Processing
Integrated Circuit
High Speed Testing
Prefetch Access
Clock Signals
Memory Array
Display Position Adjustment
CMOS Pump Circuit
Address Decoding
21 patents (USPTO):Explore Patents
1. 12488858 - Method and circuitry for handling defective memory cells and wordlines in memory module (2025-12-02),
2. 11755685 - Apparatus for data processing in conjunction with memory array access (2023-09-12),
3. 11721390 - DRAM with inter-section, page-data-copy scheme for low power and wide data access (2023-08-08),
4. 11437087 - Method and apparatus for accumulating and storing respective access counts of word lines in memory module (2022-09-06),
5. 11250904 - DRAM with inter-section, page-data-copy scheme for low power and wide data access (2022-02-15),
6. 11183231 - Apparatus for enhancing prefetch access in memory module (2021-11-23),
7. 9997224 - Memory architecture with multi-bank memory cell array accessed by local drive circuit within memory bank (2018-06-12),
8. 9653148 - Multi-bank memory device and system (2017-05-16),
9. 8754656 - High speed test circuit and method (2014-06-17),
10. 7676708 - Semiconductor integrated circuit with full-speed data transition scheme for DDR SDRAM at internally doubled clock testing application (2010-03-09),
11. 7634698 - Semiconductor integrated circuit with full-speed data transition scheme for DDR SDRAM at internally doubled clock testing application (2009-12-15),
12. 7613962 - Semiconductor integrated circuit with full-speed data transition scheme for DDR SDRAM at internally doubled clock testing application (2009-11-03),
13. 7482884 - Ring oscillator with a two-stage phase blender for generating multi-phase clock signals (2009-01-27),
14. 7404116 - Semiconductor integrated circuit with full-speed data transition scheme for DDR SDRAM at internally doubled clock testing application (2008-07-22),
15. 7292494 - Internal power management scheme for a memory chip in deep power down mode (2007-11-06),

Title: Inventor Ming-Hung Wang

Introduction: Ming-Hung Wang is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ming-Hung Wang holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Ming-Hung Wang has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Ming-Hung Wang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the field.

Conclusion: Ming-Hung Wang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology with his groundbreaking ideas and inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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