The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Jun. 17, 2020
Applicant:

Piecemakers Technology, Inc., Hsinchu, TW;

Inventors:

Gyh-Bin Wang, Hsinchu County, TW;

Ming-Hung Wang, Hsinchu, TW;

Tah-Kang Joseph Ting, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 5/02 (2006.01); G11C 11/4096 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 5/025 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 11/4096 (2013.01);
Abstract

An apparatus for enhancing prefetch access in a memory module may include a memory chip. The memory chip includes a memory cell array, a plurality of bit lines and a plurality of word lines, a plurality of BLSAs, and a plurality of main data lines. The memory cell array may be arranged to store data, and the plurality of bit lines and the plurality of word lines may be arranged to perform access control of the memory cell array. The plurality of BLSAs may sense a plurality of bit-line signals restored from the plurality of memory cells and convert the plurality of bit-line signals into a plurality of amplified signals, respectively. The main data lines may directly output the amplified signals, through selection of CSLs of the BLSAs on the memory chip, to a secondary semiconductor chip, for performing further processing of the memory module, thereby enhancing the prefetch access.


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