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For the Inventor, By the Inventor

Hsin-Chu, Taiwan

Ming-Dou Ker

USPTO Granted Patents = 21 

Average Co-Inventor Count = 3.0

ph-index = 13

Forward Citations = 591(Granted Patents)


Location History:

  • Tainan Hsien, TW (1995 - 1999)
  • Hsin-Chu, TW (1997 - 2012)

Company Filing History:

goldMedal10 out of 7,074 
 
United Microelectronics Corp.
 patents
silverMedal5 out of 2,029 
 
Winbond Electronics Corporation
 patents
bronzeMedal3 out of 293 
 
Silicon Integrated Systems Corporation
 patents
4. 1 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
5. 1 out of 4,573 
 
Au Optronics Corporation
 patents
6. 1 out of 404 
 
Faraday Technology Corporation
 patents

Years Active: 1995-2012

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21 patents (USPTO):Explore Patents
1. 8199091 - Gamma voltage conversion device (2012-06-12),
2. 7479698 - Bonding pad structure disposed in semiconductor device and related method (2009-01-20),
3. 7397642 - ESD protection circuit (2008-07-08),
4. 6987416 - Low-voltage curvature-compensated bandgap reference (2006-01-17),
5. 6894324 - Silicon-on-insulator diodes and ESD protection circuits (2005-05-17),
6. 6885179 - Low-voltage bandgap reference (2005-04-26),
7. 6861680 - Silicon-on-insulator diodes and ESD protection circuits (2005-03-01),
8. 6806160 - Method for forming a lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process (2004-10-19),
9. 6653670 - Silicon-on-insulator diodes and ESD protection circuits (2003-11-25),
10. 6649944 - Silicon-on-insulator diodes and ESD protection circuits (2003-11-18),
11. 6521952 - Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection (2003-02-18),
12. 6498357 - Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process (2002-12-24),
13. 6465768 - MOS structure with improved substrate-triggered effect for on-chip ESD protection (2002-10-15),
14. 6011681 - Whole-chip ESD protection for CMOS ICs using bi-directional SCRs (2000-01-04),
15. 5892262 - Capacitor-triggered electrostatic discharge protection circuit (1999-04-06),

Title: The Innovative Journey of Ming-Dou Ker

Introduction: Ming-Dou Ker, a distinguished inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Ming-Dou Ker holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials, showcasing his versatility and ingenuity in inventing.

Career Highlights: With a career spanning over two decades, Ming-Dou Ker has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Ming-Dou Ker has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to push the boundaries of technological advancements.

Conclusion: Ming-Dou Ker's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a visionary inventor, shaping the landscape of technology for years to come.

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