Espoo, Finland

Mikko Ritala

This inventor holds 83 USPTO granted patents and 19 published patent applications and 3 EPO patents, primarily in Atomic Layer Deposition (CPC class C23C16-45553). Top assignees: Asm IP Holding B.v., Asm International N.v., Asm Microchemistry Ltd.. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mikko Ritala. Retrieved from https://idiyas.com/inventor/mikko-ritala

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 83 

% Patents Active = 96.4

 

Average Co-Inventor Count = 3.7

ph-index = 12

Forward Citations = 2,108(Granted Patents)

Forward Citations (Not Self Cited) = 1,940(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:


Years Active: 2002-2026

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Areas of Expertise:
Thin Films
Vapor Deposition
Transition Metals
Atomic Layer Deposition
Cyclic Deposition
Chalcogenides
Semiconductor Structures
Metal-Containing Materials
Precursor Synthesis
Organic Material Removal
Molybdenum
Tungsten
83 patents (USPTO):Explore Patents

Title: Mikko Ritala: Innovator in Semiconductor Technologies

Introduction

Mikko Ritala, based in Espoo, Finland, is a prolific inventor with a remarkable portfolio of 73 patents. His contributions primarily focus on advances in semiconductor technologies, highlighting his expertise and innovative spirit in the field.

Latest Patents

Mikko Ritala's recent patents showcase his cutting-edge work in material science and semiconductor device fabrication. One of his latest innovations relates to “Area Selective Organic Material Removal.” This patent details a method for selectively removing material from a layer, specifically a carbon-containing layer. The process involves treating the layer to activate a removal agent in a first area, allowing for more efficient material removal over that area compared to a second area with a different composition.

Another significant patent outlines a method for the “Deposition of Transition Metal-Comprising Material.” This innovation describes a cyclic deposition process that enables the formation of transition metal layers on a substrate. The method involves using a transition metal precursor and a second precursor, detailing the intricate processes that lead to the creation of advanced semiconductor devices. It also introduces a vapor deposition assembly that enhances deposition efficiency.

Career Highlights

Throughout his career, Mikko Ritala has worked with notable companies, including ASM IP Holding B.V. and ASM International N.V. His experiences at these companies have greatly contributed to his understanding and expertise in semiconductor manufacturing processes.

Collaborations

Mikko has collaborated with esteemed colleagues such as Markku Leskelä and Timo Hatanpää. These partnerships have enriched his research and fostered an environment of innovation and creativity, leading to the development of various groundbreaking technologies in the field.

Conclusion

Mikko Ritala stands as a significant figure in the arena of semiconductor technology, with a substantial number of patents to his name. His latest innovations drive efficiencies in material science and semiconductor device production, underscoring his role as a leader in technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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