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Markku Leskelä

USPTO Granted Patents = 72 (Patent Applications = 12)

EPO Patents = 3 (Patent Applications = 4)

Average Co-Inventor Count = 3.8

ph-index = 10

Forward Citations = 1,598(Granted Patents)

Forward Citations (Not Self Cited) = 1,512(Dec 10, 2025)

Company Filing History:

47 out of 1,132

Asm IP Holding B.v.

Asm International N.v.

Asm Microchemistry Oy

4. 1 out of 16,076

USA As Represented by Secretary of the Navy

5. 1 out of 179

Years Active: 1994-2025

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Areas of Expertise:

Atomic Layer Deposition

Cyclic Deposition

Transition Metal Dichalcogenides

Thin Film Synthesis

Semiconductor Structures

Metal-Containing Materials

Vapor Deposition

Precursors for ALD

Transition Metal Oxides

Metal Chalcogenides

Metamaterial Thin Films

Gold Thin Films

72 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12365988 - Atomic layer deposition and etching of transition metal dichalcogenide thin films (2025-07-22),

2. 12365981 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2025-07-22),

3. 12230506 - Area selective organic material removal (2025-02-18),

4. 12209305 - Deposition of transition metal—comprising material (2025-01-28),

5. 12173402 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus (2024-12-24),

6. 12119220 - Methods for filling a gap feature on a substrate surface and related semiconductor structures (2024-10-15),

7. 12106965 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures (2024-10-01),

8. 11959171 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process (2024-04-16),

9. 11952658 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2024-04-09),

10. 11821084 - Atomic layer deposition of rhenium containing thin films (2023-11-21),

11. 11814715 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2023-11-14),

12. 11814400 - Synthesis and use of precursors for ALD of tellurium and selenium thin films (2023-11-14),

13. 11694903 - Area selective organic material removal (2023-07-04),

14. 11667595 - Synthesis and use of precursors for vapor deposition of tungsten containing thin films (2023-06-06),

15. 11643728 - Atomic layer deposition and etching of transition metal dichalcogenide thin films (2023-05-09),

Title: Markku Leskelä - Pioneering Inventor from Espoo, Finland

Introduction: Markku Leskelä is a distinguished inventor hailing from Espoo, Finland, known for his groundbreaking contributions to the field of innovation and technology.

Latest Patents: Markku Leskelä holds several patents in the areas of materials science, nanotechnology, and semiconductor technology, showcasing his continuous commitment to pushing the boundaries of scientific discovery.

Career Highlights: With a career spanning over three decades, Markku Leskelä has held key positions in various research institutions and universities, where he has spearheaded numerous research projects leading to significant technological advancements.

Collaborations: Throughout his career, Markku Leskelä has collaborated with leading experts in the industry, academic institutions, and research organizations, fostering a culture of innovation and knowledge sharing.

Conclusion: Markku Leskelä's relentless pursuit of innovation and his remarkable contributions to the field have solidified his position as a visionary inventor, inspiring the next generation of innovators to push the limits of what is possible in the world of technology.

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