Markku Leskelä

This inventor holds 74 USPTO granted patents and 10 published patent applications and 3 EPO patents, primarily in Atomic Layer Deposition. Top assignees: Asm IP Holding B.v., Asm International N.v., Asm Microchemistry Oy. Active years: 1994-2026.

USPTO Granted Patents = 74 (Patent Applications = 10)

% Patents Active = 100.0

EPO Patents = 3 (Patent Applications = 4)

Average Co-Inventor Count = 3.8

ph-index = 11

Forward Citations = 1,624(Granted Patents)

Forward Citations (Not Self Cited) = 1,512(Dec 10, 2025)

Company Filing History:

Asm International N.v.

patents

1 out of 19

Asm Microchemistry Oy

USA as Represented by Secretary of the Navy

patents

Years Active: 1994-2026

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Areas of Expertise:

Atomic Layer Deposition

Vapor Deposition

Thin Films

Transition Metals

Cyclical Deposition

Chalcogenides

Metallic Films

Semiconductor Structures

Precursor Synthesis

Organic Material Removal

Metal-Containing Materials

Gap Filling Methods

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12565466 - Synthesis and use of precursors for vapor deposition of tungsten containing thin films (2026-03-03),

2. 12532674 - Methods and apparatus for depositing a chalcogenide film and structures including the film (2026-01-20),

3. 12365988 - Atomic layer deposition and etching of transition metal dichalcogenide thin films (2025-07-22),

4. 12365981 - Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films (2025-07-22),

5. 12230506 - Area selective organic material removal (2025-02-18),

6. 12209305 - Deposition of transition metal—comprising material (2025-01-28),

7. 12173402 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus (2024-12-24),

8. 12119220 - Methods for filling a gap feature on a substrate surface and related semiconductor structures (2024-10-15),

9. 12106965 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures (2024-10-01),

10. 11959171 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process (2024-04-16),

11. 11952658 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2024-04-09),

12. 11821084 - Atomic layer deposition of rhenium containing thin films (2023-11-21),

13. 11814715 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material (2023-11-14),

14. 11814400 - Synthesis and use of precursors for ALD of tellurium and selenium thin films (2023-11-14),

15. 11694903 - Area selective organic material removal (2023-07-04),

Title: Markku Leskelä - Pioneering Inventor from Espoo, Finland

Introduction: Markku Leskelä is a distinguished inventor hailing from Espoo, Finland, known for his groundbreaking contributions to the field of innovation and technology.

Latest Patents: Markku Leskelä holds several patents in the areas of materials science, nanotechnology, and semiconductor technology, showcasing his continuous commitment to pushing the boundaries of scientific discovery.

Career Highlights: With a career spanning over three decades, Markku Leskelä has held key positions in various research institutions and universities, where he has spearheaded numerous research projects leading to significant technological advancements.

Collaborations: Throughout his career, Markku Leskelä has collaborated with leading experts in the industry, academic institutions, and research organizations, fostering a culture of innovation and knowledge sharing.

Conclusion: Markku Leskelä's relentless pursuit of innovation and his remarkable contributions to the field have solidified his position as a visionary inventor, inspiring the next generation of innovators to push the limits of what is possible in the world of technology.