Asm IP Holding B.v.

Asm International N.v.

USA As Represented by Secretary of the Navy

Neste Oy

Asm Microchemistry Oy

Elcogen As

Markku Leskelä

Mikko Ritala

Timo Hatanpää

Viljami J Pore

Katja Väyrynen

Miika Mattinen

Jaakko Niinisto

Jani Hamalainen

Suvi P Haukka

Jani Hämäläinen

Antti H Rahtu

Miia Mäntymäki

Tiina McKee

Maarit Mäkelä

Marko Vehkamaki

Antti Niskanen

Petri Räisänen

Matti Putkonen

Anton Vihervaara

Chao Zhang

Timo Hänninen

Kaupo Kukli

Leo Salmi

Jani Holopainen

Marko Vehkamäki

Raija H Matero

Pekka Knuuttila

Elina Färm

Joshua D Caldwell

Jukka Hietala

Orest J Glembocki

Titta Aaltonen

Sharka M Prokes

Petra Alén

Jaakko Niinistō

Ari Lehtonen

Reijo Sillanpaa

Eero Santala

Maarit Kariemi

Seppo Lindroos

Mikko Rítala

Jaakko Niinistö

Enn Öunpuu

Sanni Seppälä

Juhan Subbi

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NHand a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as Oas the etching reactant and an inert gas such as Nto remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Atomic layer deposition and etching of transition metal dichalcogenide thin films

Processes for forming Mo and W containing thin films, such as MoS, WS, MoSe, and WSethin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films

Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.

Area selective organic material removal

The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

Deposition of transition metal—comprising material

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

Methods for filling a gap feature on a substrate surface and related semiconductor structures

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

Atomic layer deposition of rhenium containing thin films

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb&#x2014;Te, Ge&#x2014;Te, Ge&#x2014;Sb&#x2014;Te, Bi&#x2014;Te, and Zn&#x2014;Te thin films are provided. ALD processes are also provided for forming Se&#x2014;containing thin films, such as Sb&#x2014;Se, Ge&#x2014;Se, Ge&#x2014;Sb&#x2014;Se, Bi&#x2014;Se, and Zn&#x2014;Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiRRR)are preferably used, wherein R, R, and Rare alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS, WN, WO, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Synthesis and use of precursors for vapor deposition of tungsten containing thin films

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Espoo, Finland

Markku Leskelä