Mikihiro Kimura

This inventor holds 14 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1990-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mikihiro Kimura. Retrieved from https://idiyas.com/inventor/mikihiro-kimura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 14

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 8

Forward Citations = 144(Granted Patents)

Location History:

Hyogo-ken, JP (1997)
Itami, JP (1990 - 1998)
Hyogo, JP (1991 - 1999)
Tokyo, JP (1998 - 2000)

Company Filing History:

14 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

Years Active: 1990-2000

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Areas of Expertise:

Semiconductor Test Structure

Dielectric Film Evaluation

Superlattice Device

Image Sensing Device

Interface State Density

Dielectric Breakdown Prediction

Measurement Time Counting

Charge Coupled Devices

Buried Channel Properties

Defect Estimation

Overflow Drain Structure

Solid-State Technology

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6040199 - Semiconductor test structure for estimating defects at isolation edge (2000-03-21),

2. 5874772 - Semiconductor device (1999-02-23),

3. 5841164 - Test structure for dielectric film evaluation (1998-11-24),

4. 5786689 - Apparatus including a measurement time counting device for measuring an (1998-07-28),

5. 5621222 - Superlattice semiconductor device (1997-04-15),

6. 5594349 - Dielecrtric breakdown prediction apparatus and method, and dielectric (1997-01-14),

7. 5420513 - Dielectric breakdown prediction and dielectric breakdown life-time (1995-05-30),

8. 5266892 - Method of measuring interface state density distribution in MIS structure (1993-11-30),

9. 5114865 - Method of manufacturing a solid-state image sensing device having an (1992-05-19),

10. 5086010 - Method for manufacturing solid state image sensing device formed of (1992-02-04),

11. 5051798 - Solid state image sensing device having an overflow drain structure (1991-09-24),

12. 5032786 - Method of a measuring physical properties of buried channel (1991-07-16),

13. 5029321 - Solid state image sensing device formed of charge coupled devices (1991-07-02),

14. 4933731 - Superlattice imaging device (1990-06-12),

Title: Mikihiro Kimura: Innovator in Semiconductor Technology

Introduction

Mikihiro Kimura is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor test structure designed for estimating defects at the isolation edge. This innovative design includes an A1 pad that is electrically connected to a gate electrode, allowing for more accurate testing results without applying stress to the gate insulation film. Another notable patent involves a semiconductor device that enhances the initial breakdown voltage of an insulating film. This device features a thin insulating film on a silicon substrate, with specific oxygen concentration settings to improve performance.

Career Highlights

Mikihiro Kimura is associated with Mitsubishi Denki Kabushiki Kaisha, where he has been instrumental in advancing semiconductor technologies. His expertise and innovative approaches have led to significant improvements in device reliability and testing methodologies.

Collaborations

Throughout his career, Kimura has collaborated with notable colleagues, including Mitsunori Tsujino and Masahiro Sekine. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Mikihiro Kimura's contributions to semiconductor technology have established him as a key figure in the industry. His patents reflect a commitment to enhancing device performance and reliability, making a lasting impact on the field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]