The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1992
Filed:
Jul. 17, 1991
Mikihiro Kimura, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A solid-state image sensing device has an overflow drain structure for purging superfluous charges. The overflow drain structure includes a gate electrode (34), channel regions (35), and a drain region (32) formed inside each groove (26) formed on a main surface of a semiconductor substrate (6). Optoelectro transducers (4) are formed on main surface regions of the semiconductor substrate continuous with each groove. The drain region is formed on side walls and a bottom wall of each groove by oblique ion implantation. The overflow drain structure formed inside the groove occupies a reduced area on the main surface of the semiconductor substrate and increases its opening ratio.